As the major portion of the industry adopts FinFETs as the workhorse transistor for 16nm and 14nm, researchers worldwide are looking into the limits of FinFETs and potential device solutions for the ...

When making the transition from planar devices to FinFETs, IP design challenges arise that require education and experience when dealing with the complexities. Since the inception of the ...

Multi-patterning schemes such as Self-Aligned Double Patterning (SADP) and Self-Aligned Quadruple Patterning (SAQP) have been used to successfully increase semiconductor device density, circumventing ...

The shift from planar transistors to finFETs is a major inflection point in the IC industry. FinFETs are expected to enable higher performance chips at lower voltages. And the next-generation ...

Promising options for 7nm are Gate-All-Around Nanowire (GAA NW) FETs, which offer significantly better short-channel electrostatics, and quantum-well FinFETs (with SiGe, Ge, or III-V channels), which ...

(Nanowerk News) At this week’s VLSI 2015 Symposium in Kyoto (Japan), imec reported new results on nanowire FETs and quantum-well FinFETs towards post-FinFET multi-gate device solutions. As the major ...

Imec has been looking at the most promising candidates for the next process generation. Finfets will run for the 14nm-16nm node, but 7nm is expected to need a new type of transistor. The question is: ...